cystech electronics corp. spec. no. : c858t3 issued date : 2011.06.28 revised date : page no. : 1/7 BTD882ST3 cystek product specification low vcesat npn epitaxial planar transistor BTD882ST3 features ? low v ce (sat), 0.3v typ. at i c / i b = 2a / 0.2a ? excellent current gain characteristics ? complementary to btb772st3 ? pb-free lead plating package symbol outline absolute maximum ratings (ta=25 c) parameter symbol limit unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 6 v i c (dc) 3 a collector current i c (pulse) 7 *1 a p d (ta=25 ) 1 power dissipation p d (tc=25 ) 10 w operating junction and storage temperature range tj ; tstg -55~+150 c note : *1. single pulse pw 350 s,duty 2% QQ . to-126 e c b bv ceo 30v i c 3a r cesat(typ) 150m BTD882ST3 b base c collector e emitter
cystech electronics corp. spec. no. : c858t3 issued date : 2011.06.28 revised date : page no. : 2/7 BTD882ST3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 60 - - v i c =50 a, i e =0 bv ceo 30 - - v i c =1ma, i b =0 bv ebo 6 - - v i e =50 a, i c =0 i cbo - - 100 na v cb =60v, i e =0 i ebo - - 100 na v eb =6v, i c =0 *v ce(sat) - 0.3 0.5 v i c =2a, i b =0.2a *r ce(sat) - 0.15 0.25 i c =2a, i b =0.2a *v be(sat) - - 1.5 v i c =2a, i b =0.2a *h fe 1 160 - - - v ce =2v, i c =20ma *h fe 2 180 - 390 - v ce =2v, i c =500ma *h fe 3 150 - - - v ce =2v, i c =1a f t - 270 - mhz v ce =5v, i c =0.5a, f=100mhz cob - 16 - pf v cb =10v, f=1mhz *pulse test : pulse width 300 s, duty cycle 2% classification of h fe 2 rank p range 180~390 ordering information device package shipping marking BTD882ST3 to-126 (pb-free lead plating package) 200 pcs / bag, 10 bags/box, 10 boxes/carton d882
cystech electronics corp. spec. no. : c858t3 issued date : 2011.06.28 revised date : page no. : 3/7 BTD882ST3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200ua 300ua 400ua 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5ma 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 1 2 3 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2ma 4ma 6ma 10m a 20m a emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 20ma 50 m a current gain vs collector current 10 100 1000 10 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=1v current gain vs collector current 10 100 1000 10 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=2v
cystech electronics corp. spec. no. : c858t3 issued date : 2011.06.28 revised date : page no. : 4/7 BTD882ST3 cystek product specification typical characteristics(cont.) current gain vs collector current 100 1000 10 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=5v saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat=10ib 25 75c 125c saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat=50ib 25 75c 125c saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat=100ib 25 75c 125c saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125 vbesat=50ib 75 25 capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage---(v) capacitance---(pf) cib cob
cystech electronics corp. spec. no. : c858t3 issued date : 2011.06.28 revised date : page no. : 5/7 BTD882ST3 cystek product specification typical characteristics(cont.) cutoff frequency vs collector current 10 100 1000 1 10 100 1000 collector current --- ic(ma) cutoff frequency---ft(mhz) ft@vce=5v on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) 125 vce=2v 75 25 power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 175 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 2 4 6 8 10 12 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c858t3 issued date : 2011.06.28 revised date : page no. : 6/7 BTD882ST3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c858t3 issued date : 2011.06.28 revised date : page no. : 7/7 BTD882ST3 cystek product specification to-126 dimension *: typical millimeters inches millimeters inches marking: d882 date code style: pin 1.emitter 2.collector 3.base 3-lead to-126 plastic package cystek package code: t3 dim min. max. min. max. dim min. max. min. max. a 2.500 2.900 0.098 0.114 e *2.290 *0.090 a1 1.100 1.500 0.043 0.059 e1 4.480 4.680 0.176 0.184 b 0.660 0.860 0.026 0.034 h 0.000 0.300 0.000 0.012 b1 1.170 1.370 0.046 0.054 l 15.300 15.700 0.602 0.618 c 0.450 0.600 0.018 0.024 l1 2.100 2.300 0.083 0.091 d 7.400 7.800 0.291 0.307 p 3.900 4.100 0.154 0.161 e 10.600 11.000 0.417 0.433 3.000 3.200 0.118 0.126 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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